| PART |
Description |
Maker |
| SSC1118 |
1A Positive Low Dropout Fixed-Mode Regulato r With EN Function
|
SeCoS Halbleitertechnologie GmbH
|
| SCH2602 |
350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| UPA2702GR UPA2702GR-E2 UPA2702GR-E1 UPA2702TP-E2 U |
SWITCHING N- AND P-CHANNEL POWER MOS FET
NUT, HEX, 2-56 X STD THK, SST 开关N沟道功率MOSFET
Nch enhancement-type MOSFET
SWITCHING N-CHANNEL POWER MOSFET
|
NEC, Corp.
|
| UPA2711GR |
SWITCHING N- AND P-CHANNEL POWER MOS FET
SWITCHING P-CHANNEL POWER MOSFET
|
NEC[NEC]
|
| UPA2716GR |
SWITCHING P-CHANNEL POWER MOSFET
SWITCHING N- AND P-CHANNEL POWER MOS FET
|
NEC[NEC]
|
| UPA2730TP UPA2730TP-AZ UPA2730TP-E2 UPA2730TP-E1 |
Pch enhancement-type MOS FET
SWITCHING P-CHANNEL POWER MOSFET
SWITCHING N- AND P-CHANNEL POWER MOS FET
42000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, HSOP-8
|
NEC[NEC]
|
| H7N0608FM |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET Power Switching
|
Renesas Electronics Corporation
|
| 2SK203607 |
N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCHING APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SK2137 |
V(dss): 600V; V(gss): 30V; I(d): 4A; 30W; switching N-channel power MOSFET. For industrial use
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| H7N1004LD H7N1004LS H7N1004M H7N1004LM |
Transistors>Switching/MOSFETs
Silicon N-Channel MOSFET High-Speed Power Switching
|
Renesas Electronics Corporation
|
| H5N2517FN-E H5N2517FN |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
